Regensburg 2019 – wissenschaftliches Programm

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CPP: Fachverband Chemische Physik und Polymerphysik

CPP 58: Nanostructures, Nanostructuring and Nanosized Soft Matter

CPP 58.5: Vortrag

Donnerstag, 4. April 2019, 16:15–16:30, H13

Pattern transfer of self-assembled block copolymer nanopores into silicon and silicon dioxide by reactive ion etching — •Alexander Stratmann, Daniel Kool, Julius Bürger, Katharina Brassat, and Jörg K. N. Lindner — Paderborn University, Paderborn, Germany

Reactive ion etching (RIE) is a highly reproducible dry etching method, which combines the benefits of physical sputtering with ions and chemical etching with radicals. By combining RIE processes with block copolymer (BCP) lithography large-area nanopore patterns in the sub-20 nm regime can be created. To this end, the self-ordering of a polystyrene-b-methyl methacrylate (PS-b-PMMA) BCP is exploited to create hexagonally arranged PMMA cylinders in a PS matrix. After the selective removal of the PMMA cylinders the PS thin film can be used for common lithography processes such as RIE. The pattern transfer was accomplished on silicon and silicon dioxide surfaces by etching with a SF₆/Ar and a CHF₃/Ar plasma, respectively. To complete the lithography process, the removal of the mask was done by an O₂/Ar plasma. We achieved a highly reproducible method to etch nanopores with homogenous etching depth, etch profile, pore diameter and high feature density. The process steps are investigated by SEM, AFM and cross-sectional TEM.