Regensburg 2019 – wissenschaftliches Programm
CPP 66.4: Vortrag
Freitag, 5. April 2019, 10:45–11:00, H18
High-Speed and High-Current Vertical Organic Transistors — •Felix Dollinger1, Henning Iseke1, Kyung-Geun Lim2, Axel Fischer1, Petr Formánek3, Hans Kleemann1, and Karl Leo1 — 1Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Dresden, Germany — 2Korea Research Institution for Standard Science (KRISS), Daejeon, Korea — 3Leibniz-Institut für Polymerforschung Dresden e. V. (IPF), Dresden, Germany
Organic thin-film transistors enable light-weight, inexpensive and flexible electronic applications. The Organic Permeable Base Transistor (OPBT) is a vertical transistor design that allows for very high current densities, and hence the fastest operating speed of all organic transistors with transit frequency reaching 40 MHz [Kheradmand-Boroujeni et al., 2018].
We will explain the operating mechanism for OPBTs and give insights into optimizations of the base oxide layers and investigations on the stability of the device.
The modulation of current in an OPBT is achieved by a metallic base electrode that is located in the center of the vertical stack. In the on-state, this thin aluminum electrode is permeable for electrons. It is passivated by a native oxide layer to prevent leakage current. We have been able to significantly improve the oxide layer and reduce parasitic leakage currents. Electrical stress measurements on OPBTs help to understand the suitability of these transistors for long-time real-life applications. Illustrative TEM images will be shown to clarify the device's structure and function.