Regensburg 2019 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 14: Poster

DS 14.28: Poster

Dienstag, 2. April 2019, 17:00–20:00, Poster E

Investigation of ultra-low energy ion implanted graphene by RBS and NRA — •Manuel Auge and Hans Hofsäss — II. Physikalisches Institut, Universität Göttingen, 37077 Göttingen, Germany

Dopant introduction into both graphene and transition metal dichalcogenides (TMDs) in a controllable manner is highly desirable. Hence, electronic doping other than electric gauging or chemical functionalization would be a major breakthrough. In our study, a unique mass selected ion beam deposition system is used to incorporate low energy ions into 2D-lattices. Therefor, a 30 keV ion beam is decelerated in a UHV-chamber down to energies as low as 10 eV. A beam sweep ensures a uniform profile over an area of 1 cm² up to 2.5 cm². At the present time, sources are available for B, C, N ,F, P, S, Mn, Fe, Se, W and Au ions. In this work, we show the successful incorporation of B, Mn and Au into graphene. In order to proof the implanted areal concentration as well as the elemental composition, Rutherford backscattering measurements were performed on tetrahedral amorphous carbon films doped with Mn and Au, respectively. For this purpose, we use a 860 keV He²⁺-beam and detect the backscattering events caused by the interaction between the high energetic projectile and the coulomb potential of atomic nuclei of the sample. Light elements in low concentrations are only hard to detect analytically. Nevertheless, implanted B can be investigated by a nuclear reaction analysis. We irradiate implanted test samples with a 430 keV proton beam generating the ¹¹B(p,2α)α nuclear reaction with a detection limit of about 5·10¹³ B/cm².