Regensburg 2019 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 14: Poster
DS 14.49: Poster
Dienstag, 2. April 2019, 17:00–20:00, Poster E
Indium tin oxide (ITO) direct wafer bonding — •Michael Hönle1,2, Peter Oberhumer2, Sophia Huppmann1, Simeon Katz1, Kurt Hingerl2, and Thorsten Wagner2 — 1OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, Regensburg, 93055, Germany — 2Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria
Direct wafer bonding allows combination of separately grown and prepared Si and III-V devices and, moreover, high bonding toughness can be achieved at temperatures as low as room temperature. In order to facilitate good electrical interconnection and little absorption, the intermediate bonding layer ideally should offer high electrical conductivity and high transparency. Indium tin oxide (ITO) is a material which offers both of these properties. In this work we demonstrate the feasibility of a defect free ITO-ITO direct wafer bond of non-patterned Si wafers and characterize the bond interface qualitatively and quantitatively. Moreover, to create insight into the bonding mechanism of an ITO-ITO direct wafer bond, high resolution transmission electron microscopy (HR-TEM) was employed. To show the possible application of ITO-ITO direct wafer bonding with III-V materials, we transferred epitaxially grown GaN layers to Si wafers and display that the obtained bonded wafers are robust enough for further front of line processing. In order to optimize the bonding process a good understanding of the material properties is needed, therefore ITO layers were analyzed using surface analytical methods before and after direct wafer bonding.