Regensburg 2019 – wissenschaftliches Programm
DS 19: Focus Session: Direct-Write Nanofabrication and Applications II
(Electron Beam Induced Processing) (joint session DS/TT)
DS 19.6: Hauptvortrag
Mittwoch, 3. April 2019, 16:45–17:15, H32
Fundamentals of low-energy electron induced dissociation of focused electron beam induced deposition precursors — •Oddur Ingólfsson — Science Institute and the Department of Chemistry, University of Iceland,, Dunhagi 3, 107 Reykjavík. Iceland.
When high-energy electron beams imping on a solid surface, as is the case in FEBID, backscattered and secondary electrons (SEs) are abundant. The energy distribution of the SEs typically peaks well below 10 eV, has a significant contribution close to 0 eV and a tail to higher energies. In this energy range, electron induced bond ruptures through Dissociative Ionization, Dissociative Electron Attachment and Neutral and Dipolar Dissociation can be very efficient. These processes have different energy dependence and the nature and thus the reactivity of the fragments formed is also distinctly different. The cross sections for these processes and the branching ratios for different dissociation paths depend critically on the respective molecular composition. This, in turn opens opportunities to tailor the sensitivity of potential FEBID precursors towards preferred paths to achieve better deposition efficiency and better composition control. In this contribution fundamental aspect of electron induced dissociation processes are discussed in context to their role in FEBID. Acknowledgement; This project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 722149.