Regensburg 2019 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 24: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...) Part I
DS 24.11: Vortrag
Donnerstag, 4. April 2019, 17:45–18:00, H39
Epitaxial Mn5Ge3 (100) layer on Ge (100) substrates obtained by flash lamp annealing — •yufang xie1, ye yuan2, mao wang1, chi xu1, rene huebner1, joerg grenzer1, yujia zeng3, Manfred Helm1, Shengqiang Zhou1, and Slawomir Prucnal1 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany — 2Physical Science and Engineering Division, King Abdullah University of Science and Technology, 23955-6900 Thuwal, Saudi Arabia — 3Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, 518060 Shenzhen, China
Mn5Ge3 thin films have been demonstrated as promising spin-injector materials for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter, we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at the ambient pressure. The single crystalline Mn5Ge3 is ferromagnetic with a Curie temperature of 283 K. Both the c-axis of hexagonal Mn5Ge3 and the magnetic easy axis are parallel to the Ge (100) surface. The millisecond-range flash epitaxy provides a new avenue for the fabrication of Ge-based spin-injectors fully compatible with CMOS technology.