Regensburg 2019 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 25: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...) Part II
DS 25.2: Vortrag
Freitag, 5. April 2019, 09:45–10:00, H32
Mass separated low-energy nitrogen ion assisted thin film growth — •Michael Mensing, Philipp Schumacher, Christoph Grüner, Jürgen W. Gerlach, and Bernd Rauschenbach — Leibniz Institute of Surface Engineering (IOM), Leipzig, Germany
Ion beam or plasma assistance is consistently and increasingly utilized to enhance the capabilities of physical deposition techniques. The impact of their applications range from precise engineering of film properties to the alleviation of process constraints. Albeit the influence of the energetic particle flux has been extensively studied, the distinct contributions of individual ion species to film growth are typically not investigated due to the extensive efforts required. In this study the application of an energy and mass selected ion-beam assisted deposition (EMS-IBAD) setup is presented. It features a compact quadrupole mass filter system to separate the prominent ion species (N+, N2+) involved in the growth processes of nitride thin films on the example of GaN. The thin films are deposited on 6H-SiC(0001) by employing different nitrogen ion species and compared with regards to their topography, crystalline quality and phase composition for different ion kinetic energies and ion-to-atom arrival ratios. The chosen hyperthermal ion energy range is <200 eV. The higher energy atomic nitrogen ions could be identified to impede the formation of the metastable zinc-blende GaN phase whereas the crystalline quality deteriorates. Molecular nitrogen ions are demonstrated to efficiently dissociate for kinetic energies as low as 20 eV, providing increased growth rates while preserving the crystalline quality.