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Regensburg 2019 – scientific programme

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DS: Fachverband Dünne Schichten

DS 9: Layer Deposition (ALD, MBE, Sputtering, ...)

DS 9.1: Talk

Monday, April 1, 2019, 15:00–15:15, H39

MBE growth of є-Ga2O 3 by using a Sn catalyst-layer — •Alexander Karg1, Max Kracht2, Sebastian Benz2, Fabian Michel2, Marcus Rohnke3, Stephan Figge1, Jörg Schörmann2, Marco Schowalter1, Jürgen Janek3, Andreas Rosenauer1, and Martin Eickhoff11Institute of Solid State Physics, University of Bremen, Bremen, Germany — 2Institute of Experimental Physics 1, Justus Liebig University, Giessen, Germany — 3Physical-Chemical Institute, Justus Liebig University, Giessen, Germany

MBE-growth of є-Ga 2 O 3 on c-plane Al 2 O 3 by MBE is only possible in metal-rich growth conditions, which normally leads to the formation and subsequent desorption of the volatile suboxide Ga 2 O, thus hampering layer-growth. Additional supply of Sn during growth expands the growth window and enables the formation of є-Ga 2 O 3 in this regime.

To further investigate the role of Sn during growth we significantly reduced the Sn exposure time and deposited an ultrathin (<1 ML) Sn layer before Ga 2 O 3 growth.

We found that this Sn layer is sufficient to enable the formation of є-Ga 2 O 3 thin films without Sn incorporation, demonstrating the catalytic role of Sn in the growth process. The impact of this technique for processing technology of є-Ga 2 O 3 devices will also be discussed.

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