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Regensburg 2019 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 9: Layer Deposition (ALD, MBE, Sputtering, ...)

Montag, 1. April 2019, 15:00–16:30, H39

15:00 DS 9.1 MBE growth of є-Ga2O 3 by using a Sn catalyst-layer — •Alexander Karg, Max Kracht, Sebastian Benz, Fabian Michel, Marcus Rohnke, Stephan Figge, Jörg Schörmann, Marco Schowalter, Jürgen Janek, Andreas Rosenauer, and Martin Eickhoff
15:15 DS 9.2 Influence of surface modification on electrochemical performance of Ni-rich NCM cathodes for Lithium ion batteries — •Rajendra Singh Negi and Matthias T. Elm
15:30 DS 9.3 Epitaxial growth of SrTiO3 thin films by MOVPE — •Aykut Baki, Julian Stöver, Klaus Irmscher, Toni Markurt, Martin Albrecht, and Jutta Schwarzkopf
15:45 DS 9.4 Cu- and Mn-doping in ferroelectric K0.5Na0.5NbO3 epitaxial films grown by PLD — •Daniel Pfützenreuter, Martin Schmidbauer, Julian Stöver, Klaus Irmscher, Detlef Klimm, and Jutta Schwarzkopf
16:00 DS 9.5 Ion-beam sputtered oxide buffer layers as a viable alternative to thin films grown with atomic layer deposition — •Martin Becker, Florian Kuhl, Philip Klement, Angelika Polity, Jörg Schörmann, Peter J. Klar, and Sangam Chatterjee
16:15 DS 9.6 Correlation between sputter deposition parameters and I-V curves in memristive devices — •Finn Zahari, Sven Gauter, Julian Strobel, Julia Cipo, Felix Georg, Thomas Mussenbrock, Lorenz Kienle, Holger Kersten, and Hermann Kohlstedt
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