DS 9: Layer Deposition (ALD, MBE, Sputtering, ...)
Monday, April 1, 2019, 15:00–16:30, H39
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15:00 |
DS 9.1 |
MBE growth of є-Ga2O 3 by using a Sn catalyst-layer — •Alexander Karg, Max Kracht, Sebastian Benz, Fabian Michel, Marcus Rohnke, Stephan Figge, Jörg Schörmann, Marco Schowalter, Jürgen Janek, Andreas Rosenauer, and Martin Eickhoff
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15:15 |
DS 9.2 |
Influence of surface modification on electrochemical performance of Ni-rich NCM cathodes for Lithium ion batteries — •Rajendra Singh Negi and Matthias T. Elm
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15:30 |
DS 9.3 |
Epitaxial growth of SrTiO3 thin films by MOVPE — •Aykut Baki, Julian Stöver, Klaus Irmscher, Toni Markurt, Martin Albrecht, and Jutta Schwarzkopf
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15:45 |
DS 9.4 |
Cu- and Mn-doping in ferroelectric K0.5Na0.5NbO3 epitaxial films grown by PLD — •Daniel Pfützenreuter, Martin Schmidbauer, Julian Stöver, Klaus Irmscher, Detlef Klimm, and Jutta Schwarzkopf
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16:00 |
DS 9.5 |
Ion-beam sputtered oxide buffer layers as a viable alternative to thin films grown with atomic layer deposition — •Martin Becker, Florian Kuhl, Philip Klement, Angelika Polity, Jörg Schörmann, Peter J. Klar, and Sangam Chatterjee
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16:15 |
DS 9.6 |
Correlation between sputter deposition parameters and I-V curves in memristive devices — •Finn Zahari, Sven Gauter, Julian Strobel, Julia Cipo, Felix Georg, Thomas Mussenbrock, Lorenz Kienle, Holger Kersten, and Hermann Kohlstedt
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