Regensburg 2019 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 9: Layer Deposition (ALD, MBE, Sputtering, ...)

DS 9.4: Vortrag

Montag, 1. April 2019, 15:45–16:00, H39

Cu- and Mn-doping in ferroelectric K0.5Na0.5NbO3 epitaxial films grown by PLD — •Daniel Pfützenreuter, Martin Schmidbauer, Julian Stöver, Klaus Irmscher, Detlef Klimm, and Jutta Schwarzkopf — Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin

(K,Na)NbO3 is a lead-free ferro- and piezoelectric material potentially used for e.g. sensor or memory applications. Pulsed laser deposition (PLD) of K0.5Na0.5NbO3 thin films with reproducible high crystalline quality requires the use of phase pure and dense targets. Therefore, an optimized target preparation routine based on solid-state sintering was developed. Raw materials are ground to a mean grain size of 10 µm and pressed into a target applying an isostatic pressure of 2000 bar. Subsequently, a two-step sinter routine ensures the formation of a pure perovskite phase. Here, a calcination step at 850 ^∘C and a subsequent sinter step at 1050 ^∘C are executed. Besides pure K0.5Na0.5NbO3 also the impact of Cu- and Mn-doping on the sinter procedure has been studied. Aliovalent doping on KxNa1-xNbO3 ceramics has been reported to have a significant impact on electrical properties of the material, however, studies on thin films are rarely published. Therefore, doped K0.5Na0.5NbO3 targets were prepared and applied for thin film growth with PLD. Under optimized growth conditions, deposition of K0.5Na0.5NbO3 thin films resulted in well-ordered epitaxial films. The impact of Cu- and Mn-doping on thin films has been studied with respect to structural and electrical properties of the films.