Regensburg 2019 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 12: HL Poster I
HL 12.15: Poster
Montag, 1. April 2019, 17:30–20:00, Poster E
Charge transport in graphene and graphene nanoribbons on hexagonal boron nitride as field effect transistor devices — •Leo Schnitzspan1, Alexander Tries1,2,3, Marie-Luise Braatz1, and Mathias Kläui1,2 — 1Institut für Physik, Johannes Gutenberg Universität Mainz — 2Graduate School of Excellence Materials Science in Mainz — 3Max Planck Institute for Polymer Research
Graphene nanoribbons (GNRs) have attracted attention due to particular physical properties resulting from the geometrical confinement, and these also depend crucially on both width and edge morphology [1]. Hexagonal boron nitride (hBN) has turned out as ideal substrate for graphene due to its flat and similarly lattice structure, which results in charge mobilities up to 275 000 cm2 V−1 s−1 [2]. Using a field-effect transistor layout with a hBN underlayer, we study the electronic properties of graphene and GNRs and analyze the underlying mechanisms. Different wet and dry graphene transfer methods are tested and developed. Magnetotransport as well as gate-dependent measurements are investigated to understand the impact of hBN on the transport properties.
[1] Son et al., Phys. Rev. Lett. 97, 216803 (2006). [2] Zomer, P. J., et al., App. Phys. Lett. Bd. 99.23 (2011)