Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 12: HL Poster I
HL 12.47: Poster
Montag, 1. April 2019, 17:30–20:00, Poster E
Luminescence of indium residues after local droplet etching and thermal annealing on GaAs (111)A substrates — •Julian Ritzmann1, Nandlal Sharma2, Dirk Reuter1,2, Henning Moldenhauer3, Jörg Debus3, Marc Portail4, Arne Ludwig1, and Andreas D. Wieck1 — 1Ruhr-Universität Bochum, D-44780 Bochum — 2Universität Paderborn, D-33098 Paderborn — 3Technische Universität Dortmund, D-44227 Dortmund — 4CNRS-CRHEA, 06560 Valbonne, France
(111)A-oriented GaAs has proved as interesting substrate for the growth of nanostructures of high symmetry. GaAs quantum dots on (111)A-oriented substrates produced by droplet epitaxy, for example, exhibit reduced fine-structure splitting. However, these QDs are strongly distributed in size resulting in rather broad photoluminescence (PL) spectra. More uniform quantum dot ensembles are achieved by filling up nanoholes on (001)-oriented Al(Ga)As with GaAs. Ensemble PL inhomogeneous broadenings of less than 10 meV are realized. Nanoholes are generated via local droplet etching (LDE), a technique which is capable of alternating the substrate surface in various ways and to produce a wide spectrum of nanostructures. Our approach is to establish the LDE technique on (111)A-oriented substrates. Therefore, we present a study on different parameters for the LDE with indium droplets using atomic force microscopy, PL, micro-PL and cathodoluminescence. We discuss luminescent characteristics of indium residues which form InGaAs/GaAs heterostructures with the substrate material.