Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 12: HL Poster I

HL 12.8: Poster

Montag, 1. April 2019, 17:30–20:00, Poster E

From multi- to monolayer: monitoring the time-evolution of laser-induced thinning of MoS₂ layers by Raman and photoluminescence spectroscopy — •Christian Tessarek, Oleg Gridenco, Jan Müßener, Stephan Figge, Kathrin Sebald, Jürgen Gutowski, and Martin Eickhoff — Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany

Exfoliation of MoS₂ crystals is a simple method to obtain multi- and monolayer material. However, size and number of monolayers produced by this technique are usually small and not well controllable. Laser-thinning is an established method to produce MoS₂ monolayers from multilayers [1]. For a better control of a homogeneous monolayer generation, monitoring of the thinning process is required.

Multi- and monolayers show different distinct properties in Raman and photoluminescence spectroscopy and thus these spectroscopic techniques are suitable to monitor the transition from multi- to monolayer. A laser emitting at 325 or 406 nm is used simultaneously for both thinning and spectroscopy. The time-evolution of the Raman and photoluminescence peaks will show a layer-by-layer etching of MoS₂ and a transformation into amorphous MoO_x in an oxygen containing atmosphere during the thinning process. Microstructuring of multilayers into monolayers such as writing of single points, lines and areas will be demonstrated.

[1] A. Castellanos-Gomez et al., Nano Lett. 12, 3187 (2012).