Regensburg 2019 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 16: Focus Session: Oxide Semiconductors for Novel Devices III
HL 16.14: Vortrag
Dienstag, 2. April 2019, 13:00–13:15, H34
Tuning functionality at the nanoscale — •Donald M. Evans1, Theodor. S. Holstad1, Aleksander. B. Mosberg2, Per-Erik Vullum2, Didirik Småbråten1, Zewu Yan3, Sverre Selbach1, Antonius Van Helvoort2, and Dennis Meier1 — 1Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), Trondheim, Norway. — 2Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim, Norway. — 3Department of Physics, ETH Zurich, 8093 Zürich, Switzerland
One of the stand out scientific achievements of the twenty first century is the ability to tune a material*s functional properties, e.g. doping silicon to become either p- or n-type. As we reach the limits of silicon technology other options to tune functional properties become interesting, particularly local changes rather than bulk changes. In this work we use an atomic force microscope (AFM) to locally apply an electric field that changes the conductive properties of a hexagonal manganite (ErMnO3). This has all the control and resolution of an AFM giving us the freedom to write any combination of shapes and sizes for nano-circuitry. We analyse these areas of enhanced conductivity with a transmission electron microscope (TEM) to find changes in crystal structure and do electron energy loss spectroscopy (EELS) to look for changes in chemical composition. These are combined with Density Functional Theory (DFT) work to establish the likely mechanism of enhanced conductivity.