Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 17: Two-dimensional Materials I (joint session HL/CPP)
HL 17.2: Vortrag
Dienstag, 2. April 2019, 09:45–10:00, H36
Metalorganic Vapour Phase Epitaxy (MOVPE) Technology for 2D Transition Metal Dichalcogenides (TMDC) — •Michael Heuken1,2, Annika Grundmann2, Dominik Andrzejewski3, Tilmar Kümmell3, Gerd Bacher3, Holger Kalisch2, and Andrei Vescan2 — 1AIXTRON SE, Dornkaulstr. 2, 52134 Herzogenrath, Germany — 2Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074 Aachen, Germany — 3Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, Bismarckstr. 81, 47057 Duisburg, Germany
The 2D TMDC MoS2 and WS2 have raised strong interest due to their exceptional properties and prospects for micro- and optoelectronics. For fundamental material physics and the development of (opto)electronic devices, a reproducible deposition technology providing uniform layers of controlled thickness and purity is indispensable. MOVPE is perfectly suited for this task and can furthermore be scaled up to production with high volume and yield. Here, we report on the systematic investigation of 2D MoS2 and WS2 growth on sapphire using a hydride-free MOVPE process in a commercial AIXTRON multi-wafer MOVPE reactor. Metal hexacarbonyls (WCO and MCO) as well as DTBS are used as high-purity MO sources. The impact of the fundamental growth parameters is discussed, shedding light on nucleation and lateral 2D growth until full layer coalescence. Samples are characterized using Raman spectroscopy, SEM, AFM, PL, and reflectometry. Finally, a WS2-based LED will be presented to demonstrate the applicability of 2D TMDC for optoelectronic devices.