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Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 2: Nitrides: Devices

HL 2.14: Talk

Monday, April 1, 2019, 13:00–13:15, H31

Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications — •Henning Winterfeld1, Lars Thormählen2, Hanna Lewitz2, Erdem Yarar2, Tom Birkoben1, Nicolai Niethe1, Nicolas Preinl1, Henning Hanssen3, Eckhard Quandt2, and Hermann Kohlstedt11Nanoelectronics, Faculty of Engineering, Kiel University, Germany — 2Inorganic Functional Materials, Faculty of Engineering, Kiel University, Germany — 3Fraunhofer Institute for Silicon Technology, 25524 Itzehoe, Germany

In this work, we present the approach of using low temperature AlN in the gate stack of a MOS transistor. Placing the transistor on a cantilever in combination with the piezoelectric AlN layer allows the use as a force sensor. With this approach the piezoelectric FET was able to detect forces as low as 100 µN. Taking the scaling possibilities into account, the detection of an even wider range of forces is possible with this device. Additionally, we show a performance comparison of our sensors using AlN and AlScN as piezoelectric layers. Furthermore, the placement of the sensing material close to the channel and therefore, the amplifying properties of the transistor reduces noise and possibly allows for higher sensitivity. The CMOS compatibility of AlN would allow the incorporation of this device into standard silicon fabrication without limitations.

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