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Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 2: Nitrides: Devices

HL 2.8: Talk

Monday, April 1, 2019, 11:30–11:45, H31

Study of heavy-ion irradiation induced degradation on AlInN/GaN on Si High- Electron-Mobility Transistors (HEMTS) — •Seshagiri rao Challa1, Nahuel Vega2,3,4, Christian Kristukat2,3, Nahuel a Müller2, Mario Debray2,3, Gordon Schmidt1, Jürgen Christen1, Florian Hörich1, Hartmut Witte1, Armin Dadgar1, and André Strittmatter11Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Germany — 2Gerencia de Investigación y Aplicaciones, CNEA, Argentina — 3Escuela de Ciencia y Tecnología, Universidad Nacional de San Martín(UNSAM), Argentina — 4Consejo Nacional de Investigaciones Científicas y Tecnológicas (CONICET), Argentina

75 MeV sulfur-ion irradiation induced degradation on AlInN/GaN on Si high electron mobility transistor (HEMT) structures are systematically studied for ion fluences ranging from 2.8×1012 cm−2 to 5.5×1013 cm−2. Ion stopping range, ionization vs displacement energy loss profile, and recoil atom distributions were simulated using SRIM software tool (Stopping and range of ions in matter). Transfer curves show a reduction of on-state current, off-state current (buffer leakage), and a positive threshold voltage shift with higher fluences as well as an increase of vertical conductivity by up to eight orders of magnitude. µ-PL measurements show an intensity reduction of the donor bound exciton (D0,X) emission in the GaN buffer layer with increasing fluences. Although performance is degraded, all HEMTs remain fully functional even at highest irradiation levels, which makes them an attractive choice to space applications.

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