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Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 23: Two-dimensional Materials II: graphene (joint session HL/CPP)

HL 23.5: Vortrag

Dienstag, 2. April 2019, 15:00–15:15, H36

Anisotropic strain induces a transition between rhombohedral and Bernal stacking in multilayer graphene flakesFabian Geisenhof1, Raúl Guerro-Aviles2, Marta Pelc2, Felix Winterer1, Tobias Gokus3, Yasin Durmaz3,4, Daniela Priesack1, Jakob Lenz1, Fritz Keilmann4,5, Andres Ayuela2, and •Thomas Weitz1,4,5,61AG Physics of Nanosystems, Faculty of Physics, LMU München, Germany — 2Donostia International Physics Center, San Sebastian, Spain — 3Neaspec GmbH, München, Germany — 4Department of Physics, LMU München, Germany — 5Center for Nanoscience (CeNS), München, Germany — 6Nanosystems Initiative Munich (NIM), München, Germany

Graphene multilayers are still full of surprises - this is clear at latest since the recent discovery of unconventional superconductivity in 'magic-angle' bilayer graphene. Not only in bilayers the density of states critically depends on the lateral alignment of subsequent layers, but also in thicker graphene stacks (e.g. in trilayers). There, two different forms of stacking, so called Bernal and rhombohedral stacking exist, each with distinct charge transport properties. Via combined theoretical and experimental efforts we have surprisingly found [1], that during the fabrication process with conventional e-beam lithography, anisotropic strain forces rhombohedrally stacked regions towards Bernal stacking. We have experimentally identified the stacking change with Raman spectroscopy and s-SNOM measurements and devised methods how to avoid the transformation. [1] F.G. Geisenhof et al. ArXiv:1810.00067 (2018)

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