Regensburg 2019 – wissenschaftliches Programm
HL 27.12: Vortrag
Mittwoch, 3. April 2019, 12:30–12:45, H36
Transfer of electrodeposited MoS2 to silicon substrate for electronic devices — •Talha Nisar, Torsten Balster, and Veit Wagner — Jacobs University Bremen gGmbH, Campus Ring 1, 28759, Bremen, Germany
Molybdenum disulfide is a promising candidate for future electronics due to its 2 dimensional nature. It can be deposited by various methods such as mechanical exfoliation and chemical vapor deposition (CVD). In our approach we use electrodeposition as an alternative large area deposition method to CVD. For this purpose a MoS4 ion precursor is used in the anodic regime. The electrodeposited layer consists of MoS3 as confirmed by Raman and XPS measurements. Such layers are converted to MoS2 by post annealing at temperature above 450∘C. Raman analysis shows that the crystallinity of such film improves with higher post annealing temperatures. In addition, UV-Vis and AFM measurements confirm MoS2 formation in flakes with smooth surface. We demonstrated that these layers can successfully be mechanically transferred to a SiO2/Si.