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Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.16: Poster

Wednesday, April 3, 2019, 17:30–20:00, Poster E

UVB LED with narrow emission angle using advanced silicon-based reflector package and Fresnel lens — •Anna Ghazaryan1, Martin Guttmann1, Tim Wernicke1, Neysha Lobo Ploch2, Tim Kolbe2, Katrin Hilbrich2, Steffen Knigge2, Dennis Mitrenga3, Indira Käpplinger3, Thomas Ortlepp3, Sven Einfeldt2, and Michael Kneissl1,21Technische Universität Berlin, Institute of Solid State Physics, Berlin, Germany — 2Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany — 3CiS Forschungsinstitut für Mikrosensorik GmbH, Erfurt, Germany

InAlGaN-based LEDs in the UVB spectral range are interesting for a number of applications. Depending on the application of the UVB LEDs, a specific radiation pattern typically with a strong forward emission is needed. In this paper we investigate the influence of different package designs and optical elements on the far-field radiation pattern of UVB LEDs emitting around 310 nm by measuring the angle dependent electroluminescence and total output power. The optimized package with Al reflector and Fresnel lens allows a more directional light emission, a remarkable threefold increase of the radiant intensity from 0.34 mW/sr to 0.92 mW/sr at θ = 0° and 20 mA as well as a twofold increase of the total optical power from 0.43 mW to 0.86 mW emitted within a cone of half opening angle of θ = 35° at 20 mA.

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