Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 35: HL Poster II
HL 35.49: Poster
Wednesday, April 3, 2019, 17:30–20:00, Poster E
High brightness quantum dot source of telecom O-band photons — •Jingzhong Yang1, Cornelius Nawrath2, Robert Keil3, Michael Zopf1, Xi Zhang3, Yan Chen4, Bianca Höfer3, Simone Portalupi2, Peter Michler2, Fei Ding1, and Oliver G. Schmidt3 — 1Institute for Solid State Physics, Leibniz University of Hannover, Hannover, Germany — 2Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Stuttgart, Germany — 3Institute for Integrative Nanosciences, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, Dresden, Germany — 4National University of Defense Technology, Changsha, Hunan,China
In order to realize long-distance quantum communication applications, the efficient single or entangled photon generation at telecommunication wavelengths is essential. Semiconductor quantum dots (QDs) are a very promising photon source for realizing quantum teleportation due to their non-Poissonian emission characteristics and compatibility with semiconductor technology. However, the extraction efficiency is restricted because of the significant total internal reflection caused by the high refractive index host material. Here we show high extraction efficiency from InAs/GaAs QDs emitting in the telecom O-band by using an optical antenna structure. Combining a nano-membrane containing QDs with gallium phosphide hemispherical lenses results in an increased photon extraction by two orders of magnitude. This versatile approach may therefore enable new developments for long-haul quantum communication technologies.