Regensburg 2019 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 41: Heterostructures, interfaces, and surfaces
HL 41.1: Vortrag
Donnerstag, 4. April 2019, 15:00–15:15, H31
Electronic properties of hybrid organic/inorganic semiconductor pn-junctions — Moritz Futscher1,3, •Thorsten Schultz1, Johannes Frisch2, Maryline Ralaiarisoa1, Ezzeldin Metwalli3, Marco Nardi1, Peter Müller-Buschbaum3, and Norbert Koch1,2 — 1Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany — 2Helmholtz-Zentrum Berlin für Materialien und Energie GmbH- BESSY II, 12489 Berlin, Germany — 3Physik-Department, Lehrstuhl für Funktionelle Materialien, Technische Universität München, 85748 Garching, Germany
Hybrid inorganic/organic semiconductor heterojunctions are candidates to expand the scope of purely organic or inorganic junctions. Comprehensive understanding of bulk and interface doping on the junction's electronic properties is therefore desirable. In this work, we elucidate the energy level alignment and its mechanisms at a prototypical hybrid pn-junction comprising ZnO (n-type) and p-doped α-NPD, using photoelectron spectroscopy. The level alignment can be quantitatively described by the interplay of contact-induced band and energy level bending in the inorganic and organic component away from the interface, and the formation of an interface dipole. By adjusting the dopant concentration in α-NPD, the position of the frontier energy levels of ZnO can be varied by over 0.5 eV and that of α-NPD by over 1 eV. The tunability of this pn-junction's energy levels evidences the substantial potential of the hybrid approach for enhancing device functionality.