Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 45: HL Posters III
HL 45.34: Poster
Thursday, April 4, 2019, 18:30–21:00, Poster E
Laser writing of scalable single spin in SiC — •Yu-Chen Chen1, Patrick Salter2, Matthias Niethammer1, Matthias Widmann1, Klorian Kaiser1, Roland Nagy1, Naoya Morioka1, Charles Bbin1, Patrick Berwian3, Jürgen Erlekampf2, Martin Booth3, and Jörg Wrachtrup1,4 — 13.Physikalisches Institut, Universitaet Stuttgart, Germany — 2Department of Engineering Science, University of Oxford, Oxford, UK — 3Fraunhofer IISB, D-91058 Erlangen, Germany — 4Max-Planck Institute for Solid State Research, Stuttgart, Germany
Single photon emitters in silicon carbide (SiC) have attracted widespread attention as photonic systems, applied on quantum applications [1-2]. However, to achieve scalable devices it is essential to generate the single photon emitters at desired location on demand. Here we report the controlled creation of single silicon vacancy (VSi) centres in 4H SiC using laser writing and without annealing. Due to the aberration correction in the writing apparatus and the non-annealing process, the generation of single VSi centres with yield up to 30%, located within about 80 nm of the desired position in the transverse plane. We also investigated the mechanism of the laser writing VSi centres and there are 15.5 photons involved in the laser writing VSi centres process. The results demonstrate a new tool to fabricate single VSi centres in SiC for quantum technologies and provide some insight into the laser writing defects in dielectric materials.
1. A. Lohrmann et al, Rep. Prog. Phys. 80 (2017) 2. S. Castelletto et al, Adv. Optical Mater. 1 (2013)