Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 45: HL Posters III

HL 45.49: Poster

Donnerstag, 4. April 2019, 18:30–21:00, Poster E

Growth of MoO₃ Microfakes by Thermal Evaporation — •Sophie Müller, Daniel Splith, Holger von Wenckstern, and Marius Grundmann — Felix-Bloch-Institut, Universität Leipzig

The discovery of graphene as a 2-dimensional material had great impact on current research. Nevertheless, a 2-dimensional material with semiconducting properties, especially a band gap, would be desirable for the realization of 2-dimensional electronic devices. Molybdenum oxide is a semiconductive metal oxide with numerous interesting properties, like its wide band gap of more than 2.7 eV [1]. Balendhran et al. investigated 2-dimensional molybdenum oxide and reported a high room temperature electron mobility of 1160 cm² V⁻¹ s⁻¹ [2].
In order to realize electronic devices like field-effect transistors based on 2-dimensional MoO₃, a reproducible fabrication of thin molybdenum oxide nano- or microflakes is necessary. In this contribution, we investigated the growth of preferably thin molybdenum oxide microflakes via thermal evaporation. The influence of the major growth parameters temperature and argon gas flow were determined. Furthermore, the separation and thinning of the microflakes into nanoflakes was investigated. With this, nanoflakes with lateral dimensions of several 10 µm and thicknesses between 20 and 30 monolayers were realized.
[1] de Castro et al., Advanced Materials, 29, 1701619 (2017)
[2] Balendhran et al., Advanced Materials, 25.1, 109-114 (2013)