Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 45: HL Posters III

HL 45.56: Poster

Thursday, April 4, 2019, 18:30–21:00, Poster E

Finite element simulation and experimental characterization of field-effect transistors based on amorphous zinc tin oxide — •Michael Bar, Daniel Splith, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Leipzig, Germany

Within the quest for field-effect transistors (FETs) with high frequency switching capability various designs have been proposed, including vertical layouts [1,2]. Cost effective production of transparent, flexible FETs also requires a naturally abundant material such as zinc tin oxide (ZTO), a transparent amorphous oxide semiconductor which can be deposited at room temperature [3].
Simple lateral device designs, however, are not optimal for achieving high frequency switching for which vertical layouts are well suited due to the strongly reduced channel length, avoiding the need for submicrometer lithography.
In this contribution, a finite element approach was used to simulate lateral and vertical thin-film field-effect transistors in order to determine the influence of device geometry on static and dynamic properties such as transfer characteristics, cut-off frequency and on-resistance. The obtained data is then compared with experimental results obtained from transistors fabricated on sputtered ZTO thin films [4].
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