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HL: Fachverband Halbleiterphysik
HL 45: HL Posters III
HL 45.66: Poster
Donnerstag, 4. April 2019, 18:30–21:00, Poster E
Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route towards Dirac cones in III-V semiconductors — •Christiaan Post1, Tao Xu2,3, Nathali Franchina Vergel2, Yannick Lambert2, Francois Vaurette2, Ludovic Desplanque2, Xavier Wallart2, Didier Stiévenard2, Bruno Grandidier2, Christophe Delerue2, and Daniel Vanmaekelbergh1 — 1Debye Institute for Nanomaterials Science, Utrecht, The Netherlands — 2Institute of Electronics, Microelectronics and Nanotechnology (IEMN), Lille, France — 3Key Laboratory of Advanced Display and System Applications, Shanghai, China
The design of two-dimensional periodic structures at the nanoscale has renewed attention for band structure engineering. In case of a nano scale honeycomb geometry, and entirely new band structure emerges in which the highest valence and lowest conduction bands become Dirac cones at the K-points, while the semiconductor quantum well band gap remains nearly unaltered.
In this research we report on the fabrication of a 10 nm thick InGaAs quantum well (QW) on a p-type InP substrate with a honeycomb symmetry structure by creating a triangular anti-lattice inside the QW using high-resolution electron beam lithography. The morphology of the samples is intensively studied, and the quality of the lattice is characterized, which is used for an extensive statistical analysis to determine the disorder inside the lattices. The results are supported by theoretical simulations on the band structure and density of states (DOS).