Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 45: HL Posters III
HL 45.67: Poster
Thursday, April 4, 2019, 18:30–21:00, Poster E
Reduction reflection for silicon wafer with maskless plasma etching by CHF3 and H2 — •Alena Okhorzina1,2, Jens Hirsch1,2, and Norbert Bernhard1 — 1Hochschule Anhalt, 06366, Köthen, Deutschland — 2Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Straße 12, 06120 Halle (Saale)
The main goal is the development of a basic fluorocarbon plasma etching process for the structuring of silicon surfaces and its compounds. Plasma texturing of glass surface allows getting a moth-eye surface which has a light trapping effect. This will increase the efficiency of solar modules The main problem with the use of CHF3 and H2 gases is the determination of the parameters of the etching process for the predominance of the etching over the deposition. In this work, pre-scanning experiments were obtained for a maskless plasma texturing of silicon by CHF3/H2 within a design of experiments. Results of this investigation were the main impact parameters of the plasma etching according to the wafer reflection. The main impact parameters are (I) the CHF3/H2 fraction, (II) the value of capacitive and inductive coupled power, and (III) the pressure in the plasma chamber. The reflection of silicon samples after CHF3/H2 plasma texturing was investigated in this work. Sample one shows a reflection of 3-5 % in the short wavelength region (< 500 nm) and a reflection of 10-20 % in the long wavelength region (> 500 nm). The second investigated sample shows similar results but has a reflection of approx. 20 % in the short wavelength region.