Regensburg 2019 – wissenschaftliches Programm
HL 5.6: Vortrag
Montag, 1. April 2019, 10:45–11:00, H36
Superconductivity in MBE grown InxSn1−xTe/Bi2Te3 films — •Andrea Bliesener, Junya Feng, Alexey Taskin, and Yoichi Ando — Institute of Physics II, University of Cologne, Germany
InxSn1−xTe is derived from the topological crystalline insulator SnTe which becomes superconducting when doped with Indium and it is one of the top candidates for topological superconductivity .
InxSn1−xTe thin films have been grown by molecular beam epitaxy (MBE) on a Bi2Te3 buffer layer, which has a good lattice matching for the growth in the (111) direction . Using in situ post-annealing procedures, we achieve robust superconductivity in the grown InxSn1−xTe films.
To look for possible signatures of topological superconductivity in the grown films, we fabricated tunnelling junctions on the surface of the superconducting InxSn1−xTe films. The tunnelling spectroscopy data shows a clear two-gap structure in the measured conductance spectra which points to the coexistence of bulk and surface superconductivity in the studied InxSn1−xTe thin films.
 S. Sasaki et al; Physical Review Letters 109, 217004 (2012)
 A. A. Taskin et al; Physical Review B 89, 121302(R) (2014)