Regensburg 2019 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
MA: Fachverband Magnetismus
MA 15: Magnetism Poster A
MA 15.79: Poster
Dienstag, 2. April 2019, 10:00–13:00, Poster E
Fabrication of tunnel junctions using a combination of sputtering and atomic layer deposition — •L. P. Potapov1,2, K. Geishendorf3, R. Schlitz1,2, K. Nielsch3,4, S. Fabretti1,2, S. T. B. Goennenwein1,2, and A. Thomas3 — 1Institute for Solid State and Materials Physics, Technical University of Dresden — 2Center for Transport and Devices of Emergent Materials, Technical University of Dresden — 3Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden), Institute for Metallic Materials — 4Institute of Materials Science, Technical University of Dresden
Since more than 20 years, magnetic tunnel junctions are attracting great attention in spin electronics research. One of the key challenges for the fabrication of high-quality tunnel elements is the deposition of ultrathin, homogeneous and pinhole free tunnel barriers.
Atomic layer deposition (ALD) seems to be very promising for that, since it allows for conformal and robust coating of arbitrarily shaped surfaces. Following up on a recent publication [1], this work investigates the fabrication and properties of magnetic tunnel junctions fabricated by a combination of magnetron sputtering and ALD. Specifically, we look into the combination of shadow masks and ALD deposition in view of high-quality (magnetic) tunnel junctions. The characterization of the tunnel junctions is performed using complementary structural and electrical methods.
[1] S. Fabretti et. al., Appl. Phys. Lett. 105, 132405 (2014)