Regensburg 2019 – wissenschaftliches Programm
MA 36.10: Vortrag
Mittwoch, 3. April 2019, 17:30–17:45, H53
Lateral spin transport in chemically doped organic semiconductors — •Janis Siebrecht1,2, Shu-Jen Wang1, Deepak Venkateshvaran1, and Henning Sirringhaus1 — 1Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom — 2present address: Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany
A central goal in the field of spintronics is the development of materials with high spin diffusion lengths. Their low cost and long spin lifetimes make organic semiconductors a potential candidate for technological applications. Here, we test the spin transport in the conjugated polymers IDTBT, N2200, P3HT and CDT-BTZ at different levels of chemical doping. Our devices generate a pure spin current using ferromagnetic resonance (FMR) and exploit the inverse spin Hall effect (ISHE) to convert the spin current into a voltage. By varying the channel width of the organic between source and detector, we find a spin diffusion length of several hundred nanometers for P3HT doped with F4TCNQ. We use the dependence of the ISHE signal on thermal de-doping to test a theoretical model  that describes spin diffusion based on hopping and exchange coupling.
1. Yu. Z.G., Nanoelectron. Spintron. 1:1-18 (2015)