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MA: Fachverband Magnetismus

MA 4: Topological insulators and spin-dependent transport phenomena

MA 4.10: Vortrag

Montag, 1. April 2019, 12:00–12:15, H52

Reconfigurable spin tunnel diode based on stacked two-dimensional materials — •Ersoy Sasioglu¹, Stefan Blügel², and Ingrid Mertig¹ — ¹Institute of Physics, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) Germany — ²Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany

Tunnel diodes and transistors are considered as one of the most promising candidates for the future high-speed, low-power nanoelectronic devices due to their predicted ultra-high frequency operation in the THz range. Recently we proposed a reconfigurable spin tunnel diode and transistor concept using spin gapless semiconductors (SGSs) and half metallic magnets (HMMs) [1]. The two-terminal spin tunnel diode is comprised of a SGS electrode and a HMM electrode separated by a thin insulating tunnel barrier and allows electrical current to pass either in one direction or in other direction depending of the relative orientation of the magnetization direction of the electrodes. Two-dimensional stacked van der Waals materials, which form high-quality heterointerfaces due to absence of dangling bonds, offer a unique platform for realization of such a spin diode concept. By employing the nonequilibrium Green’s function method combined with density functional theory we demonstrate the reconfigurable rectification characteristics of the spin tunnel diode based on two-dimensional stacked transition-metal dichalcogenides and dihalides. Funding by the European Union (EFRE) is greatly acknowledged.
Ersoy Şaşioğlu and Stefan Blügel, (2017), PCT Patent No. WO 2017076763(A1).