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Regensburg 2019 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 51: Magnetism Poster B

MA 51.58: Poster

Donnerstag, 4. April 2019, 15:00–18:00, Poster C

Vertical spin valves using the novel two-dimensional material FeGe2 — •Dietmar Czubak, Samuel Gaucher, Jens Herfort, Holger T. Grahn, and Manfred Ramsteiner — Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institutim Forschungsverbund Berlin e. V., Hausvogteiplatz 5–7, 10117 Berlin, Germany

The formation of FeGe2 in a layered tetragonal structure has been recently achieved by solid-phase epitaxy of Ge on Fe3Si. This two-dimensional (2D) polymorph of FeGe2 does not exist in bulk form and appears to be a promising material for spintronic applications. We investigate vertical spin valve structures based on this novel 2D material as an intermediate layer between the two Heusler alloy films Fe3Si (bottom) and Co2FeSi (top). At room temperature, these spin valves exhibit a magnetoresistance effect of around 0.1 % originating from the switching between the parallel and antiparallel magnetization configurations of the Fe3Si and Co2FeSi layers. A decrease of the operating temperature leads to a reduced magnetoresistance effect due to a phase change in the FeGe2 layer from a non-magnetic into the ferromagnetic state. At cryogenic temperatures, the magnetoresistance value depends in a complex manner on the sample orientation relative to the external in-plane magnetic field. Two spin valve-like signals appear with opposite signs for particular orientations. The analysis of the observed anisotropic behavior allows for the extraction of information on the magnetization behavior of the FeGe2 film sandwiched between two ferromagnetic Heusler alloy films.

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