Regensburg 2019 – wissenschaftliches Programm
O 17.2: Poster
Montag, 1. April 2019, 17:45–20:00, Poster F
Electronic transport in Gold-contacted graphene on Germanium — •Simeon Bode1, Anna Sinterhauf1, Manuel Auge2, Mindaugas Lukosius3, Christian Wenger3, Gunther Lippert3, Hans Christian Hofsäss2, and Martin Wenderoth1 — 1IV. Physikalisches Institut, Universität Göttingen, 37077 Göttingen, Germany — 2II. Physikalisches Institut, Universität Göttingen, 37077 Göttingen, Germany — 3IHP, 15236 Frankfurt (Oder), Germany
The successful growth of large-scale graphene on Ge/Si(001) is a large step towards the integration of graphene into silicon technologies . However, since the exploration of graphene-based devices necessarily includes graphene-metal contacts, the quality of these contacts crucially limits the performance of the device. Therefore, an in-depth investigation of metal contacts on graphene on Ge/Si(001) is required. In this study, we use Kelvin probe force microscopy with an additionally applied electric field across the sample to analyze the local electrostatic potential of Gold-contacted graphene on Ge/Si(001). We find an exceptional sheet reistance for the graphene layer, whereas the electronic transport is significantly hindered close to the contacts due to the formation of a transition region. Additionally, element analysis using Rutherford backscattering reveals that the Au contact is not homogeneous; instead, an AuGe alloy forms in the contact region with a Gold Germanium ratio of approximately 50:50. This work is financially supported by the DFG through the SFB1073.
 Lukosius et al., ACS Appl. Mater. Interfaces 8, 33786-33793, 2016