Regensburg 2019 – wissenschaftliches Programm
O 17.5: Poster
Montag, 1. April 2019, 17:45–20:00, Poster F
Transfer-Free, Highly Crystalline Graphene on Insulator for Novel Applications in Electronics — •Håkon Ivarssønn Røst1, Justin W. Wells1, Rajesh Kumar Chellappan1, Anton Tadich2, Zheshen Li3, and Antonija Grubišić Čabo4 — 1Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology (NTNU), N-7491 Trondheim, Norway — 2Australian Synchrotron, 800 Blackburn Rd., Clayton, Victoria 3168, Australia — 3Department of Physics and Astronomy, Ny Munkegade 120, 8000 Aarhus C, Denmark — 4School of Physics & Astronomy, Monash University, Clayton, Victoria 3168, Australia
Problems associated with the preparation of high-quality and contamination-free graphene on semiconductor that does not heavily interact with its underlying substrate has so far hindered its large-scale integration in device structures. This study presents a method for growing graphene on silicon carbide (SiC) by means of various transition metal catalysts, with subsequent intercalation of silicon and oxygen under the graphene layers to form an electrically insulating dielectric layer. The interaction of thin metal films with thermally treated SiC mediates liberation of carbon, allowing the formation graphene on semiconductor at temperatures down to 600°C. Intercalation of silicon and oxygen then decouples the graphene from its substrate by forming an insulating silicon oxide layer. The result is highly crystalline top layers of free-standing graphene, where the thickness of the interfacial dielectric layer can be tuned by the amount of silicon that gets intercalated prior to the oxidation step.