Regensburg 2019 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 20: Poster Monday: Electronic Structure

O 20.7: Poster

Montag, 1. April 2019, 17:45–20:00, Poster F

Electronic structure of epitaxially grown topological insulator (Bi,Sb)₂Te₃ films with varying magnetic doping. — •Sonja Schatz¹, Ali Al-Janabi¹, Maximilian Rudloff¹, Celso Fornari¹, Thiago R. F. Peixoto¹, Hendrik Bentmann¹, Steffen Schreyeck², Martin Winnerlein², Charles Gould², Karl Brunner², Laurens W. Molenkamp², and Friedrich Reinert¹ — ¹Experimentelle Physik VII, Universität Würzburg, D-97074 Würzburg — ²Experimentelle Physik III, Universität Würzburg, D-97074 Würzburg

Topological insulators (TI) have gained great interest over the last years. In particular, the topological properties of the ternary compound (Bi,Sb)₂Te₃ can be varied via doping with magnetic impurities. The magnetic doping of TI thin films is especially interesting, due to the formation of a ferromagnetic ground state, which leads to the arising of the quantum anomalous Hall state at low temperatures.

In this work we explore the electronic structure of (Bi,Sb)₂Te₃ films grown on BaF₂ (111) by angle-resolved photoelectron spectroscopy (ARPES) experiments. The nearly perfect lattice match between film and substrate results in homogenous films and ARPES data of high quality. Besides results on pristine thin films we will also present measurements on (Bi,Sb)₂Te₃ layers doped with magnetic impurities, for which an exchange splitting of the topological surface state is expected in the ferromagnetic state.