Regensburg 2019 – scientific programme
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O: Fachverband Oberflächenphysik
O 27: Metal Oxide Surfaces I: Structure, Epitaxy and Growth
O 27.4: Talk
Tuesday, April 2, 2019, 11:15–11:30, H16
Plasma assisted cleaning and homoepitaxial growth of β−Ga2O3. — •Nicolas Braud, Felix Feske, Thomas Schmidt, and Jens Falta — Institute of Solid State Physics, University of Bremen, Germany
β−Ga2O3 is expected to play an important role in power electronics due to its high breakdown field and high Baliga figure of merit. In addition, gallium oxide has a wide band gap of 4.9 eV, wich enables exciting applications as transparent conducting oxide (TCO).
In this work, annealing in molecular as well as in atomic oxygen have been compared to a sputter-cleaning approach. Optimum results regarding hydroxide and carbon removal, surface morphology and structure has been achieved with plasma assisted cleaning at up to 700 ∘C, as revealed by x-ray photoelectron spectroscopy, low-energy electron diffraction, and microscopy.
We also present structural and morphological investigations of the initial homoepitaxial growth by molecular beam epitaxy of β-Ga2O3 on two different surface orientations: (100-) and (010)-β-Ga2O3.