Regensburg 2019 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 34: New Methods and Developments III: Spectroscopy and Tribology
O 34.4: Vortrag
Dienstag, 2. April 2019, 14:45–15:00, H13
surface characterization of ruthenium as novel barrier layer during the chemical mechanical polishing process of integrated circuit for sub-10 nm technology node — •jie cheng2, xinchun lu1, and jinshan pan2 — 1state key lab of tribology, tsinghua university, beijing, china — 2division of surface and corrosion science, kth royal institute of technology, Stockholm, Sweden
Ruthenium (Ru), as a novel diffusion barrier layer, is quite promising in the application of the sub-10 nm technology node of integrated circuit. During the chemical mechanical polishing process of Ru, complex changes will occur on Ru surface and Cu/Ru interface under the function of both mechanical abrasion and the chemical corrosion. This paper focuses on the study of surface properties of Ru in potassium periodate solutions: chemical and physical properties of surface films on Ru such as thickness, compactness, uniformity, and chemical compositions; tribology and corrosion properties of Ru like corrosion, galvanic corrosion (between Ru and Cu), and tribo-corrosion during the abrasion process. On this basis, the material removal mechanism of Ru is fully revealed during the chemical mechanical polishing process, the technique of which is widely used to realize local and global planarization of wafer surfaces. Results explores the nature of tribo-corrosion: the galvanic corrosion between the abrasion induced depassivation area and the passivation area. The evolution of three periodical changes between Ru and Cu interface was also fully revealed by microscopic methods. The findings in the research have guiding significance to the smooth application of Ru as substitutive barrier layer.