Regensburg 2019 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 35: 2D Materials I: Growth and Properties of Transition Metal Dichalcogenides, Phase Transitions

O 35.5: Vortrag

Dienstag, 2. April 2019, 15:00–15:15, H14

Observing different levels of airborne contaminations on TMDC materials — •Korbinian Pürckhauer, Dominik Kirpal, Alfred J. Weymouth, and Franz J. Giessibl — University of Regensburg, Regensburg, Germany

The development in nanoelectronics demands reducing the size of its elements which led to an increase of interest in TMDCs. These show a range of interesting properties like a band gap in the range of Si and GaAs and allow high on/off switching ratios for FETs. Fabrication of devices incorporating those TMDCs is mostly done in ambient conditions and thus investigation of TMDCs in ambient is sustainable for the future. We imaged MoS₂, WS₂, MoSe₂ and WSe₂ in real space by using atomic force microscopy (AFM). Mechanical exfoliation of the TMDCs provided very large (at least hundreds of nm) clean terraces on MoS₂ and WS₂. In contrast, the MoSe₂ and WSe₂ surfaces appeared to be contaminated directly after cleavage in most cases. On all surfaces we were able to observe atomic resolution in ambient conditions. Our findings suggest that TMDCs with sulfur as a chalcogen atom are more suitable for devices made in ambient conditions.