Regensburg 2019 – wissenschaftliches Programm
O 35.6: Vortrag
Dienstag, 2. April 2019, 15:15–15:30, H14
Unraveling the growth mechanism of single-domain molybdenum disulfide on Au(111) — •Moritz Ewert1,2,3, Lars Buß1,3, Paolo Moras4, Jens Falta1,2, and Jan Ingo Flege1,2,3 — 1Institute of Solid State Physics, University of Bremen, Germany — 2MAPEX Center for Materials and Processes, University of Bremen, Germany — 3Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Germany — 4Istituto di Struttura della Materia del Consiglio Nazionale delleRicerche, Sincrotrone Trieste SCpA, Italia
As a transition metal dichalcogenide single-layer molybdenum disulfide (MoS2) is a heavily investigated system.
Due to its direct band gap, the electronic properties of single-layer MoS2 have been subject to several surface science methods.
A well-known model system is MoS2 on Au(111).
We present in situ low-energy electron microscopy (LEEM) and micro-diffraction (LEED) observations of MoS2 growth on Au(111) at elevated temperature using two distinctly different deposition rates. Our investigations reveal similar but different expansion mechanisms of the MoS2 islands changing a balanced distribution of the two mirror domains towards a single domain distribution. Structural characterization by I(V)-LEEM and investigations of the electronic bandstructure using angle-resolved photoelectron spectroscopy both confirm single-layer nature of the MoS2 islands. We could identify step pushing of the growing MoS2 being responsible for this phenomena.