Regensburg 2019 – wissenschaftliches Programm
O 66.9: Poster
Mittwoch, 3. April 2019, 17:45–20:00, Poster B2
Oxygen interaction with h-BN on Ni(111) — •Christian Papp1, Florian Späth1, Soni Himadri2, Fabian Düll1, Johann Steinhauer1, Udo Bauer1, Philipp Bachmann1, Hans-Peter Steinrück1, and Andreas Görling2 — 1Friedrich-Alexander Universität Erlangen-Nürnberg, Lehrstuhl für Physikalische Chemie II, Egerlandstr. 3, 91058 Erlangen — 2Friedrich-Alexander Universität Erlangen-Nürnberg, Lehrstuhl für Theoretische Chemie , Egerlandstr. 3, 91058 Erlangen
Hexagonal boron nitride (h-BN) is an interesting material to study, as an isoelectronic and structural analogue to graphene. However, due to the ionic character of the boron-nitrogen bond a bandgap of ~5.4 eV is found. This makes h-BN an interesting dielectric for graphene-based 2D-transistors. Moreover the band gap is ideal for emission of UV-light. To further modify the properties of 2D materials a chemical functionalization is needed.
In an activated adsorption process, molecular oxygen forms a molecularly bound species on a supported h-BN layer on Ni(111) at room temperature. By increasing the sample temperature to 400 K, oxygen can be intercalated under h-BN. At 600 K and higher, even the oxidation of h-BN becomes possible. The system was studied by XPS and NEXAFS. The results are supported by DFT calculations.