Regensburg 2019 – wissenschaftliches Programm
O 74: Focus Session: Growth, Properties and Application of Epitaxial Graphene (joint session DS/HL/O)
O 74.7: Vortrag
Donnerstag, 4. April 2019, 11:45–12:00, H32
Epitaxial growth of ferromagnetic semiconducting CrBr3 monolayer — •Weijiong Chen1, Zeyuan Sun1, Lehua Gu1, Shiwei Wu1,2, and Chunlei Gao1,2 — 1State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Physics, and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China — 2Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
Recent discovery of two-dimensional (2D) ferromagnetic semiconducting materials greatly expands the family of 2D materials and invokes tremendous interests in novel magnetic related applications in 2D limit. Similar to most 2D materials, ferromagnetic 2D semiconductor is also firstly found in the mechanically exfoliated micrometer sized flakes, which hinders its further application. Here, we report the successful growth of ferromagnetic semiconducting monolayer CrBr3 by compound source molecular beam epitaxy (CS-MBE). CrBr3 compounds are directly evaporated onto the Highly Oriented Pyrolytic Graphite (HOPG) substrate and form CrBr3 thin films with a precise thickness control. The atomic, electronic and magnetic properties were characterized by in-situ spin-polarized scanning tunneling microscopy. This growth method can be applied to other layered transition metal trihalides (LTMTs) as well, which provides a simple way of growing LTMTs for exploring their electronic and magnetic properties to the monolayer limit.