Regensburg 2019 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 94: 2D Materials V: Novel Systems
O 94.3: Vortrag
Freitag, 5. April 2019, 11:00–11:15, H9
Atomic buckling, structure and defects in silicene determined by atomic force microscopy — •Pawlak Rémy1, Carl Drechsel1, Philipp D'Astolfo1, Ernst Meyer1, and Jorge Iriba Cerda2 — 1Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH 4056 — 2Theory of Surfaces, Interfaces and Nanostructures Group, Department Nanostructures and Surfaces, Instituto de Ciencia de Materiales de Madrid, Sor Juana Inés de la Cruz, 3 28049 Madrid, Spain
The atomic buckling in two-dimensional "X-enes" [1] (such as graphene and silicene) can foster a plethora of exotic electronic properties such a quantum spin hall effect, that could be readily engineered by external strain. Quantifying buckling with sub-Å precision is however challenging, since epitaxially grown 2D-layers exhibits complex restructuring and coexist at surfaces. Here, we accurately characterize the structure, defects and atomic buckling within 0.1 Å precision of all silicene phases grown on Ag(111) using low temperature atomic force microscopy (AFM) with CO-terminated tips assisted by density functional theory (DFT). While no sign of Dirac cones is found due to the strong Ag-Si hybridization, the intrinsic buckling, varying from 0.8 to 1.1 Å, yields to slight differences in the silicene electronic properties. We think that our method pave the way for future atomic scale analysis of the interplay between structural and electronic properties in other emerging 2D-Xenes.
[1] Molle, A.et al. Nature Mat. 16, 163-169 (2017).