Regensburg 2019 – wissenschaftliches Programm
PLV III: Plenarvortrag
Montag, 1. April 2019, 14:00–14:45, H2
Diamond: a Brilliant Wide Bandgap Semiconductor — •Robert Nemanich — Arizona State University, Tempe, Arizona, USA
Diamond is a semiconductor with extreme and unique properties which enable applications for high power and high frequency electronics, radiation detectors, electron emitters for ultra high voltage vacuum switches and traveling wave tube cathodes, and thermionic emitters for energy conversion.
The extreme and unique properties have enabled phenomena not typical of other semiconductors. Results on high voltage diamond p-i-n diodes have shown high current density injection mode transport, high temperature operation, pulse counting neutron detection and efficient electron emission appropriate for high voltage vacuum switches. Lateral MOSFET devices with ALD dielectrics have sustained a stable two dimensional hole-gas with sheet charge densities greater than 1E13 per cm2. Diamond surfaces have shown record low work functions and demonstrated thermionic energy conversion.
The tremendous progress in diamond applications is now limited by materials challenges. As research progresses, new device concepts are being developed based on the outstanding, extreme and unique properties of diamond materials.
Acknowledgement: financial support by ARPA-E, MIT-Lincoln Laboratory, NASA, the National Science Foundation, the Office of Naval Research.