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Regensburg 2019 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 16: Graphene II: Excitations and Nanoribbons (joint session O/TT)

TT 16.11: Vortrag

Montag, 1. April 2019, 17:30–17:45, H24

Expitaxially grown twisted bilayer graphene on SiC(0001) — •You-Ron Lin1, 2, Nafiseh Samiseresht1, 2, Markus Franke1, 2, Shayan Parhizkar1, 2, François C. Bocquet1, 2, F. Stefan Tautz1, 2, and Christian Kumpf1, 21Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, 52425 Jülich, Germany — 2Jülich Aachen Research Alliance (JARA) - Fundamentals of Future Information Technology, 52425 Jülich, Germany

Layer by layer stacking of 2D-materials such as graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs) has been widely investigated developing a field on its own [1]. It has been shown that apart from the material used for stacking, the twist angle between two layers also has an immense effect on the band structure of the stack [2]. We report a reproducible method for large scale epitaxial growth of graphene bilayers utilizing the precursor molecule borazine. The existence of both graphene layers is confirmed by angular-resolved photoemission spectroscopy (ARPES). Spot-profile analysis low electron energy diffraction (SPA-LEED) has been used to determine a twist of 30 ±0.46.
A. K. Geim et al., Nature, 499, 419, 2013.
Y. Cao et al., Nature, 556, 43, 2018.

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