Regensburg 2019 – wissenschaftliches Programm
TT 60.5: Vortrag
Donnerstag, 4. April 2019, 16:00–16:15, H23
Quantum Criticality near the Mott Transition — •Heike Eisenlohr1, Seung-Sup B. Lee2, Andreas Weichselbaum2, and Matthias Vojta1,3 — 1Institut für Theoretische Physik, Technische Universität Dresden, 01062 Dresden, Germany — 2Physics Department, Arnold Sommerfeld Center for Theoretical Physics and Center for NanoScience, Ludwig-Maximilians-Universität München, Theresienstraße 37, 80333 München, Germany — 3Center for Transport and Devices of Emergent Materials, Technische Universität Dresden, 01062 Dresden, Germany
The Mott metal-insulator transition is known to be a first order transition, with the transition line terminating in a classical critical end point at finite temperature Tc. Recent numerical studies of the half-filled Hubbard model, which employed dynamical mean-field theory and a quantum Monte Carlo impurity solver, and experiments in 2d organic salts have concordantly observed apparent quantum critical scaling of the resistivity in the regime T>Tc [1,2]. Although this conventionally indicates a nearby quantum critical point at T=0, the studied system shows only a classical first order transition at T=0. So far no theoretical explanation was able to identify the degrees of freedom which behave as if they were quantum critical, and why. To understand this unexpected scaling regime, we study the system with dynamical mean-field theory in combination with the numerical renormalization group.