Regensburg 2019 – wissenschaftliches Programm
TUT 3: Resistive Switching: From basic physics of memristive devices to neuromorphic systems (joint session HL/TUT)
Sonntag, 31. März 2019, 16:00–18:15, H4
The miniaturization of electronic devices combined with the ongoing digitalization of our live calls for a change in the paradigms of information processing. This goes hand in hand with the discovery of new physical effects that can be harnessed for electronic systems. A most promising candidate for this are resistive switching materials, in which atoms are used instead of electrons for information storage. In the last years, significant progress has been made in understanding the underlying physics and with its transfer into novel electronic devices, often called memristors or memristive devices. This Tutorial starts with an introduction to the physics of resistive switching and aims to explain how to use memristive effects to create new devices and architectures for tomorrows electronics. Furthermore, some concepts for bio-inspired, neuromorphic electronics based on resistive switching are presented.
Organizers: Martin Ziegler and Erich Runge (TU Ilmenau)
|Tutorium: Oxide based memristive devices: Current status of understanding and future prospects — •Regina Dittmann
|Tutorium: Memristors and memristive devices: theory, physics, criticisms — •Thomas Mussenbrock
|Tutorium: Memristive devices for bio-inspired electronics — •Hermann Kohlstedt