Bonn 2020 – wissenschaftliches Programm
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T 82.5: Vortrag
Donnerstag, 2. April 2020, 17:30–17:45, L-2.004
Effects of gamma irradiation on DEPFET pixel sensors for the Belle II experiment — Patrick Ahlburg1, Ladislav Andricek2, Jochen Dingfelder1, Ariane Frey3, Tomasz Hemperek1, Hans Krüger1, Carlos Marinas4, •Botho Paschen1, Rainer Richter2, Harrison Schreeck3, Benjamin Schwenker3, Philipp Wieduwilt3, and Norbert Wermes1 — 1University of Bonn, Germany — 2HLL of Max-Planck-Society, Munich, Germany — 3University of Göttingen, Germany — 4University of Valencia, CSIC, Spain
For the Belle II experiment at KEK (Tsukuba, Japan) the KEKB accelerator was upgraded to deliver e+e− collisions at a center of mass energy of ECM = 10.58 GeV with an instantaneous luminosity of 8·1035 cm−2s−1. As the innermost part of the Belle II detector, the PiXel Detector (PXD), based on DEpleted P-channel Field Effect Transistor (DEPFET) technology, is most exposed to radiation from the accelerator. A module from the final Belle II production batch was irradiated with X-rays to a total dose of 266 kGy corresponding to 7-10 years of Belle II operation. While individual components have been irradiated before, this campaign is the first full system irradiation. The performance of the DEPFET sensors and front-end electronics and efficiency studies of the module from beam tests performed before and after the irradiation will be presented.