Bonn 2020 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 82: Pixel detectors IV

T 82.5: Vortrag

Donnerstag, 2. April 2020, 17:30–17:45, L-2.004

Effects of gamma irradiation on DEPFET pixel sensors for the Belle II experimentPatrick Ahlburg1, Ladislav Andricek2, Jochen Dingfelder1, Ariane Frey3, Tomasz Hemperek1, Hans Krüger1, Carlos Marinas4, •Botho Paschen1, Rainer Richter2, Harrison Schreeck3, Benjamin Schwenker3, Philipp Wieduwilt3, and Norbert Wermes11University of Bonn, Germany — 2HLL of Max-Planck-Society, Munich, Germany — 3University of Göttingen, Germany — 4University of Valencia, CSIC, Spain

For the Belle II experiment at KEK (Tsukuba, Japan) the KEKB accelerator was upgraded to deliver e+e collisions at a center of mass energy of ECM = 10.58 GeV with an instantaneous luminosity of 8·1035 cm−2s−1. As the innermost part of the Belle II detector, the PiXel Detector (PXD), based on DEpleted P-channel Field Effect Transistor (DEPFET) technology, is most exposed to radiation from the accelerator. A module from the final Belle II production batch was irradiated with X-rays to a total dose of 266 kGy corresponding to 7-10 years of Belle II operation. While individual components have been irradiated before, this campaign is the first full system irradiation. The performance of the DEPFET sensors and front-end electronics and efficiency studies of the module from beam tests performed before and after the irradiation will be presented.

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