Dresden 2020 – scientific programme
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DS: Fachverband Dünne Schichten
DS 11: 2D semiconductors and van der Waals heterostructures II (joint session HL/DS)
DS 11.5: Talk
Monday, March 16, 2020, 16:15–16:30, POT 81
Optical Initialisation and Readout of Spin Defects in hBN — •A. Gottscholl1, M. Kianinia2, V. Soltamov1, C. Bradac2, C. Kasper1, K. Krambrock3, A. Sperlich1, M. Toth2, M. Dietz1, I. Aharonovich2, and V. Dyakonov1 — 1Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — 2School of Mathematics and Physical Sciences, Iniverity of Technology Sydney, Ultimo, NSW 2007, Australia — 3Departomento de Fisica, Universidade Federal de Minas Gerais, Belo Horizonte, MG, Brazil
The concept of optically addressable spin states in solids is considered as a major building block of upcoming quantum technologies. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spin-dependent processes in 2D materials has remained elusive. Optically accessible spin states in hBN are already theoretically predicted, however, they have not been observed experimentally yet. We investigated a bright 850nm defect-related fluorescence in hBN with magnetic resonance techniques and identified it as a negatively charged boron vacancy VB−, possessing a spin triplet ground state and a zero field splitting of 3.5 GHz [1]. The defect shows an optically detected magnetic resonance signature at room temperature and can be optically spin polarized at lower temperatures. Our results constitute a leap forward in establishing two-dimensional hBN as a prime platform for scalable quantum technologies.
[1] Gottscholl et al., arXiv:1906.03774