Dresden 2020 – scientific programme
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MA: Fachverband Magnetismus
MA 23: Functional Antiferromagnetism
MA 23.4: Talk
Tuesday, March 17, 2020, 10:15–10:30, HSZ 401
Epitaxial Mn2Au thin films for antiferromagnetic spintronics grown by molecular beam epitaxy — •Satya Prakash Bommanaboyena1, Stanislav Bodnar1, Mariia Filianina1, René Heller2, Thomas Bergfeldt3, Mathias Kläui1, and Martin Jourdan1 — 1Institut für Physik, Johannes Gutenberg Universität Mainz, Germany — 2Institut für Ionenstrahlphysik und Materialforschung, Helmholtz-Zentrum Dresden-Rossendorf, Germany — 3Institut für Angewandte Materialien, Karlsruher Institut für Technologie, Germany
The recent experimental realization of Néel order switching in antiferromagnetic Mn2Au [1] has sparked a huge interest in the growth of high-quality films of this compound. We report the preparation of high-quality epitaxial Mn2Au(001) thin films using molecular beam epitaxy. Mn and Au were co-evaporated at low deposition rates in ultra-high vacuum onto a heated epitaxial Ta(001) buffer layer deposited on Al2O3 substrates. Structural and morphological characterization of the films was carried out using reflective high energy electron diffraction, x-ray diffraction, x-ray reflectometry and temperature dependent resistance measurements. The films were found to be highly crystalline and smooth with a low defect concentration. Rutherford backscattering spectrometry and inductively coupled plasma optical emission spectroscopy were employed to determine their composition. Additionally, X-ray magnetic linear dichroism-photoemission electron microscopy was used to study their antiferromagnetic domain pattern. [1] S. Yu. Bodnar et al Nature Communications 9, 2018.